By Angus E. Taylor, W. Robert Mann
Outlines thought and strategies of calculus, emphasizing powerful knowing of options, and the fundamental rules of research. stories undemanding and intermediate calculus and lines discussions of elementary-point set concept, and homes of continuing features.
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Additional info for Advanced Calculus (3rd Edition)
One of challenge with technology scaling is the rapid increase in subthreshold leakage power due to Vt reduction. Should the present scaling trend continue it is expected that the sub-threshold leakage power will become a considerable constituent of the total dissipated power. In such a system it becomes crucial to identify techniques to reduce this leakage power component. It has been shown previously that the stacking of two off transistors has significantly reduced sub-threshold leakage compared to a single off transistor.
These mutually exclusive gates will discharge currents through the sleep transistor at different times so that the virtual ground bounce that each transitioning gate experiences will still be the same or smaller than before (from the extra capacitance at the virtual node). As a result, the delay of each gate sharing the common sleep transistor remains the same or decreases relative to the original circuit. An added benefit of replacing n sleep resistors with a single one is that the subthreshold leakage current will decrease by the ratio of the new width to the total original width.
This means that, for the same width, a sleep transistor with gate leakage causes a smaller Vx and thus reduced leakage savings in the source biasing scenario. Scaling to nanometer technologies increases the impact of gate leakage on the MTCMOS technique. PMOS devices tend to exhibit lower gate 44 Leakage in Nanometer CMOS Technologies leakage than NMOS, so using header sleep devices lowers the gate leakage relative to footer devices . However, PMOS devices in nanometer technologies still have non-negligible gate current.
Advanced Calculus (3rd Edition) by Angus E. Taylor, W. Robert Mann